| PART |
Description |
Maker |
| FQI7N10L FQB7N10L FQI7N10LTU FQB7N10LTM |
100V LOGIC N-Channel MOSFET
100V N-Channel Logic Level QFET
100V LOGIC N-Channel MOSFET 7.3 A, 100 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| HUF76633S3S HUF76633P3 HUF76633S3ST HUF76633S3STNL |
38A,100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 39A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 39A条（丁）|63AB
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Intersil, Corp.
|
| RFL1N10L FN1510 |
From old datasheet system
1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET
1A 100V 1.200 Ohm Logic Level N-Channel Power MOSFET
1A/ 100V/ 1.200 Ohm/ Logic Level/ N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| HUFA76645S3S HUFA76645P3 HUFA76645S3ST |
75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQD7N10L FQU7N10L FQU7N10LTU FQD7N10LTF FQD7N10LTM |
100V LOGIC N-Channel MOSFET
100V N-Channel Logic Level QFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| HUF76629D3 HUF76629D3S HUF76629D3STNL |
20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
20A,100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| FQP13N10L |
100V LOGIC N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF5Y9540CM |
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
| IRLM110A IRLM110ATF |
N-CHANNEL MOSFET
HEXFET Power MOSFET
Advanced Power MOSFET
100V N-Channel Logic Level A-FET
|
International Rectifier
FAIRCHILD[Fairchild Semiconductor]
|
| FDT461N |
100V N-Channel Logic Level PowerTrench MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRLW530A IRLWI530A IRLI530A IRLW530ATM |
100V N-Channel Logic Level A-FET
ADVANCED POWER MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
|
